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| STP6NK70Z STF6NK70Z - STW6NK70Z N-channel 700V - 1.5 - 5A - TO-220/TO-220FP Zener-protected SuperMESHTM Power MOSFET General features Type STP6NK70Z STF6NK70Z STW6NK70Z VDSS (@Tjmax) 700 V 700 V 700 V RDS(on) < 1.8 <1.8 < 1.8 ID 5A 5 A(1) 5A TO-220 TO-247 1. Limited only by maximum temperature allowed Extremely high dv/dt capability Improved esd capability 100% avalanche rated Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility 1 3 2 TO-220FP Internal schematic diagram Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established stripbased PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products. Applications Switching application Order codes Part number STP6NK70Z STF6NK70Z STW6NK70Z Marking P6NK70Z F6NK70Z W5NK90Z Package TO-220 TO-220FP TO-247 Packaging Tube Tube Tube August 2006 Rev 4 1/16 www.st.com 16 Contents STP6NK70Z - STF6NK70Z - STW6NK70Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 7 3 4 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 STP6NK70Z - STF6NK70Z - STW6NK70Z Electrical ratings 1 Electrical ratings Table 1. Symbol Absolute maximum ratings Parameter Value TO-220/TO-247 TO-220FP V V 5 (2) 3.15 (2) 20 (2) 30 0.24 4000 4.5 2500 A A A W W/C V V/ns V Unit VDS VGS ID ID IDM (1) PTOT Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor 5 3.15 20 110 0.87 700 30 VESD (G-S) dv/dt(3) VISO TJ Tstg Gate source ESD (HBM-C=100pF, R=1.5K) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc= 25C) Operating junction temperature Storage temperature -55 to 150 C 1. Pulse width limited by safe operation area 2. Limited only by maximum temperature allowed 3. ISD 5 A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX Table 2. Symbol Rthj-case Rthj-a Tl Thermal data Value Parameter TO-220/TO-247 Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 1.14 62.5 300 TO-220FP 4.2 C/W C/W C Unit 3/16 Electrical ratings STP6NK70Z - STF6NK70Z - STW6NK70Z Table 3. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, Id=Iar, Vdd=50V) Max Value 5 200 Unit A mJ Table 4. Symbol BVGSO Gate-source zener diode Parameter Gate-Source breakdown voltage Test conditions Igs=1mA (Open drain) Min 30 Typ. Max Unit V 1.1 Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 4/16 STP6NK70Z - STF6NK70Z - STW6NK70Z Electrical characteristics 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating, Tc=125C Min. 700 1 50 10 Typ. Max. Unit V A A A V Gate body leakage current VGS = 20V (VGS = 0) Gate threshold voltage Static drain-source on resistance VDS = VGS, ID = 100A VGS = 10 V, ID = 2.5 A 3 3.75 1.5 4.5 1.8 Table 6. Symbol gfs (1) Ciss Coss Crss Cosseq(2). td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Test conditions Min. Typ. 4.4 930 105 22 70 17 18 45 30 34 6.5 17 47 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC Forward transconductance VDS =15V, ID = 2.5A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Off-voltage rise time Fall time Total gate charge Gate-source charge Gate-drain charge VDS =25V, f=1 MHz, VGS=0 VGS=0, VDS =0V to 560V VDD=350 V, ID= 2.5 A, RG=4.7, VGS=10V (see Figure 18) VDD=560V, ID = 5A VGS =10V (see Figure 19) 1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 5/16 Electrical characteristics STP6NK70Z - STF6NK70Z - STW6NK70Z Table 7. Symbol ISD ISDM VSD (1) (2) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5 A, VGS=0 ISD = 5 A, di/dt = 100 A/s VDD = 35 V (see Figure 20) ISD = 5 A, di/dt = 100 A/s VDD = 35 V, Tj = 150 C (see Figure 20) 432 2.37 11 588 3.38 11.5 Test conditions Min Typ. Max 5 20 1.6 Unit A A V ns C A ns C A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% 6/16 STP6NK70Z - STF6NK70Z - STW6NK70Z Electrical characteristics 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Safe operating area for TO-247 Figure 6. Thermal impedance for TO-247 7/16 Electrical characteristics Figure 7. Output characteristics STP6NK70Z - STF6NK70Z - STW6NK70Z Figure 8. Transfer characteristics Figure 9. Transconductance Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations 8/16 STP6NK70Z - STF6NK70Z - STW6NK70Z Figure 13. Source-drain diode forward characteristics Electrical characteristics Figure 14. Normalizzed BVdss vs temperature Figure 15. Avalanche Energy vs starting Tj 9/16 Test circuit STP6NK70Z - STF6NK70Z - STW6NK70Z 3 Test circuit Figure 17. Unclamped inductive wafeform Figure 16. Unclamped inductive load test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load switching and diode recovery times 10/16 STP6NK70Z - STF6NK70Z - STW6NK70Z Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 11/16 Package mechanical data STP6NK70Z - STF6NK70Z - STW6NK70Z TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 12/16 STP6NK70Z - STF6NK70Z - STW6NK70Z Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 13/16 Package mechanical data STP6NK70Z - STF6NK70Z - STW6NK70Z TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 D F G1 H F2 L2 L5 E 123 L4 14/16 G STP6NK70Z - STF6NK70Z - STW6NK70Z Revision history 5 Revision history Table 8. Date 12-Nov-2004 08-Sep-2004 06-Sep-2005 16-Aug-2006 Revision history Revision 1 2 3 4 First release Complete version with curves Inserted Ecopack indication New template, no content change Changes 15/16 STP6NK70Z - STF6NK70Z - STW6NK70Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16 |
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